Transistor ASZ17 Semiconduttore

Type Transistor Germanium PNP

Case TO3

t(f) Max. (S) 20u

Max. hFE 75

Min hFE 25

Ic Max. (A) 8.0

@Ic (test) (A) 1.0

Icbo Max. @Vcb Max. (A) 3.0m

Polarity PNP

Tr Max. (s) 25u

R(sat) (Û) 40m

Derate Above 25°C 666m

Trans. Freq (Hz) Min. 220k

Oper. Temp (°C) Max. 100

@VCE (V) 1.0

Pinout Equivalence Number 3-14

Surface Mounted Yes/No NO

Maximum Collector Power Dissipation (Pc) 30 W

Maximum Collector-Base Voltage |Vcb| 60 V

Maximum Collector-Emitter Voltage |Vce| 32 V

Maximum Emitter-Base Voltage |Veb| 20 V

Maximum Collector Current |Ic max| 8 A

Max. Operating Junction Temperature (Tj) 90 °C

Collector Capacitance (Cc) 190 pF

Transition Frequency (ft): 0.11 MHz

Forward Current Transfer Ratio (hFE), MIN 25