Transistor AD163 Semiconduttore

Type Transistor Germanium PNP

Case TO3

Manufacturer Analog Devices - AMD

Vbr CBO 100

Vbr CEO 80

Max. PD (W) 30

Max. hFE 60

Min hFE 13

Ic Max. (A) 3.0

@Ic (test) (A) 1.0

Icbo Max. @Vcb Max. (A) 150u

Polarity PNP

Derate Above 25°C 666m

Trans. Freq (Hz) Min. 350k

Oper. Temp (°C) Max. 100

@VCE (V) 1.0

Pinout Equivalence Number 3-14

Surface Mounted Yes/No NO

Maximum Collector Power Dissipation (Pc) 30 W

Maximum Collector-Base Voltage |Vcb| 100 V

Maximum Collector-Emitter Voltage |Vce| 80 V

Maximum Emitter-Base Voltage |Veb| 20 V

Maximum Collector Current |Ic max| 3 A

Max. Operating Junction Temperature (Tj) 90 °C

Transition Frequency (ft): 0.25 MHz

Forward Current Transfer Ratio (hFE), MIN 12